Organic light-emitting display and method of manufacturing the same

ABSTRACT

An organic light-emitting display including a substrate, an insulating layer on the substrate, the substrate and the insulating layer having an opening therethrough penetrating, a pixel array on the insulating layer, the pixel array including a plurality of pixels that surround the opening, a first pixel adjacent to the opening from among the plurality of pixels includes a pixel electrode layer, an intermediate layer on the pixel electrode layer, and an opposite electrode layer on the intermediate layer, and a stepped portion on the substrate and adjacent to the opening, the stepped portion having an under-cut step, wherein the intermediate layer including an organic emission layer, and wherein at least one of the intermediate layer and the opposite electrode layer extends toward the opening and is disconnected by the stepped portion.

CROSS-REFERENCE TO RELATED PATENT APPLICATION(S)

This application is a continuation of U.S. patent application Ser. No.15/298,040, filed Oct. 19, 2016, which claims priority to and thebenefit of Korean Patent Application No. 10-2015-0163351, filed Nov. 20,2015 and Korean Patent Application No. 10-2015-0191024, filed Dec. 31,2015, the entire content of all of which is incorporated herein byreference.

BACKGROUND 1. Field

Aspects of the present invention are related to organic light-emittingdisplays and methods of manufacturing the same.

2. Description of the Related Art

Use of conventional display devices has become diversified with anincreasing range of uses due in part to the relatively small thicknessand relatively light weight of the display devices.

In particular, flat panel display devices have been recently studied andmanufactured.

Given that display devices may be formed in a flat shape, varioussuitable methods may be used to design the shape of the display devices.There has also been an increase in the functions that may be applied orlinked to the display devices.

SUMMARY

Aspects of one or more embodiments of the present invention are directedtoward a display device including a through-hole (e.g., an opening).

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments.

According to one or more exemplary embodiments, there is provided anorganic light-emitting display including: a substrate; an insulatinglayer on the substrate, the substrate and the insulating layer having anopening therethrough penetrating; a pixel array on the insulating layer,the pixel array including a plurality of pixels that surround theopening, a first pixel adjacent to the opening from among the pluralityof pixels includes a pixel electrode layer, an intermediate layer on thepixel electrode layer, and an opposite electrode layer on theintermediate layer; and a stepped portion on the substrate and adjacentto the opening, the stepped portion having an under-cut step, whereinthe intermediate layer including an organic emission layer, and whereinat least one of the intermediate layer and the opposite electrode layerextends toward the opening and is disconnected by the stepped portion.

In an embodiment, the substrate has a first area corresponding to theopening, a second area corresponding to the pixel array, and a thirdarea between the first area and the second area, and the stepped portionis in the third area.

In an embodiment, the insulating layer includes a recess that is concavein a thickness direction of the insulating layer, and the steppedportion is within the recess.

In an embodiment, the stepped portion includes: a first layer within therecess; and a second layer over the first layer, wherein a width of anupper portion of the first layer is less than a width of a lower portionof the second layer.

In an embodiment, the first layer and the second layer include differentmaterials.

In an embodiment, the first layer includes metal.

In an embodiment, the first pixel further includes a pixel circuitelectrically connected to the pixel electrode layer, and the pixelcircuit includes a thin film transistor (TFT) including a gateelectrode, an active layer, a source electrode, and a drain electrode,and the pixel circuit further includes a storage capacitor including alower electrode and an upper electrode.

In an embodiment, the first layer includes a same material as that ofone of the gate electrode, the source electrode, the drain electrode,the lower electrode, and the upper electrode.

In an embodiment, the second layer includes a same material as that ofthe insulating layer.

In an embodiment, a thickness of the first layer is greater than athickness of the at least one layer.

In an embodiment, the organic light-emitting display further includes aprotection layer that covers the at least one layer.

In an embodiment, the protection layer includes at least one of anorganic layer and an inorganic layer, the organic layer includingorganic-inorganic composite particles.

According to one or more exemplary embodiments, there is provided amethod of manufacturing an organic light-emitting display, the methodincluding: forming an insulating layer on a substrate, the substratehaving a first area, a second area, and a third area between the firstarea and the second area; forming a stepped portion in the third area ofthe substrate, the stepped portion having an under-cut step; forming apixel array in the second area of the substrate and including aplurality of pixels; and forming an opening that corresponds to thefirst area and penetrates through the substrate and the insulatinglayer, wherein the forming of the pixel array includes: forming a pixelelectrode layer; forming an intermediate layer on the pixel electrodelayer, the intermediate layer including an organic emission layer; andforming an opposite electrode layer on the intermediate layer, andwherein at least one of the intermediate layer and the oppositeelectrode layer extends toward the opening and is disconnected by thestepped portion.

In an embodiment, the stepped portion includes a first layer metal and asecond layer over the first layer, the first layer including metal, anda width of an upper surface of the first layer is less than a width of alower surface of the second layer.

In an embodiment, the forming of the stepped portion includes: forming apreliminary first layer below the insulating layer; partially etchingthe insulating layer such that a portion of the insulating layerremaining over the preliminary first layer forms the second layer of thestepped portion and that an end of the preliminary first layer isexposed; and forming the first layer by removing the end of thepreliminary first layer.

In an embodiment, the forming of the first layer and the forming of thepixel electrode layer are performed during a same etching process.

In an embodiment, the method further includes: forming a pixel circuitin the second area of the substrate, the pixel circuit being connectedto the pixel electrode layer, the pixel circuit including a thin filmtransistor (TFT) including a gate electrode, an active layer, a sourceelectrode, and a drain electrode, and the pixel circuit furtherincluding a storage capacitor including a lower electrode and an upperelectrode.

In an embodiment, the first layer includes a same material as that ofone of the gate electrode, the source electrode, the drain electrode,the lower electrode, and the upper electrode.

In an embodiment, a thickness of the first layer is greater than athickness of the at least one layer.

In an embodiment, the method further includes forming a protection layerthat covers a disconnected portion of the at least one layer.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readilyappreciated from the following description of the exemplary embodiments,taken in conjunction with the accompanying drawings in which:

FIG. 1 is a schematic plan view of an organic light-emitting displayaccording to an embodiment of the present invention;

FIG. 2 is a cross-sectional view taken along the line II-II′ of FIG. 1,which shows a cross-section of an organic light-emitting displayaccording to an embodiment of the present invention;

FIG. 3 is a cross-sectional view showing the region III extracted fromthe cross-section of FIG. 2;

FIGS. 4A-4G are cross-sectional views illustrating a method ofmanufacturing an organic light-emitting display, according to anembodiment of the present invention;

FIG. 5 is a cross-sectional view of an organic light-emitting displayaccording to another embodiment of the present invention;

FIGS. 6A-6F are cross-sectional views illustrating a method ofmanufacturing an organic light-emitting display, according to anotherembodiment;

FIG. 7 is a cross-sectional view of an organic light-emitting displayaccording to another embodiment of the present invention;

FIGS. 8A-8E are cross-sectional views illustrating a method ofmanufacturing an organic light-emitting display, according to anotherembodiment of the present invention;

FIG. 9 is a cross-sectional view of an organic light-emitting displayaccording to another embodiment of the present invention;

FIGS. 10A-10E are cross-sectional views illustrating a method ofmanufacturing an organic light-emitting display, according to anotherembodiment of the present invention; and

FIGS. 11A-11C illustrate electronic apparatuses including organiclight-emitting displays according to embodiments of the presentinvention.

DETAILED DESCRIPTION

As the invention allows for various suitable changes and numerousembodiments, particular embodiments will be illustrated in the drawingsand described in detail in the written description. Hereinafter, effectsand features of the present invention and a method for accomplishingthem will be described more fully with reference to the accompanyingdrawings, in which exemplary embodiments of the invention are shown.This invention may, however, be embodied in many different forms andshould not be construed as limited to the exemplary embodiments setforth herein.

One or more embodiments of the invention will be described below in moredetail with reference to the accompanying drawings. Those componentsthat are the same or are in correspondence are referenced using the samereference numerals regardless of the figure number, and repeatexplanations may not be provided.

Sizes of elements in the drawings may be exaggerated for convenience ofexplanation. In other words, because sizes and thicknesses of componentsin the drawings are arbitrarily illustrated for convenience ofexplanation, the following embodiments are not limited thereto.

FIG. 1 is a schematic plan view of an organic light-emitting display 1according to an embodiment of the present invention.

Referring to FIG. 1, the organic light-emitting display 1 includes adisplay area DA and a non-display area NA.

A through-hole (e.g., an opening) TH is in the display area DA, and apixel array 10 including pixels P that surround the through-hole TH.Each pixel P of the pixel array 10 includes a pixel circuit and anorganic light-emitting diode (OLED) electrically connected to the pixelcircuit, and provides an image via light emitted by the OLED.

The non-display area NA may surround the display area DA, and a drivingunit (e.g., a driver), such as a scan driving unit (e.g., a scan driver)and a data driving unit (e.g., a data driver), for transmitting a presetor predetermined signal to each pixel P of the display area DA.

Although the through-hole TH is in the center of the display area DA ofthe organic light-emitting display 1 in FIG. 1, embodiments are notlimited thereto. The through-hole TH may be surrounded by the pixels Pand at any location in the display area DA, but a location of thethrough-hole TH is not limited thereto.

In FIG. 1, the through-hole TH is circular, and one through-hole TH isformed. However, embodiments are not limited thereto. The through-holeTH may have any of various suitable shapes, for example, a polygon(e.g., a rectangle) and an oval, and the number of through-holes THformed is not limited to one.

Although the display area DA is circular in FIG. 1, embodiments are notlimited thereto. The display area DA may have any of various suitableshapes, for example, a polygon (e.g., a rectangle) and an oval.

FIG. 2 is a cross-sectional view taken along the line II-II′ of FIG. 1,which shows a cross-section of the organic light-emitting display 1according to an embodiment of the present invention. FIG. 3 is across-sectional view showing the region III extracted from thecross-section of FIG. 2.

Referring to FIG. 2, a substrate 100 may be formed of a material such asglass, metal, or an organic material. According to an embodiment, thesubstrate 100 may be formed of a flexible material. For example, thesubstrate 100 may be formed of a material, such as polyimide (PI) and/orthe like, to be easily bent or rolled. This is only an example, andembodiments are not limited thereto.

The substrate 100 includes a first area A1 corresponding to thethrough-hole TH, a second area A2 in which the plurality of pixels P arepositioned, and a third area A3 between the first area A1 and the secondarea A2.

The first area A1 of the substrate 100 is an area in which thethrough-hole TH is located, and the through-hole TH penetrates throughthe first area A1 of substrate 100. The through-hole TH also penetratesthrough a plurality of layers positioned on/over the substrate 100, forexample, insulating layers, namely, a buffer layer 101, a gateinsulating layer 103, and an interlayer insulating layer 107, anintermediate layer 220 including an organic emission layer, an oppositeelectrode layer 230, and a protection layer 300.

The plurality of pixels P is located in the second area A2 of thesubstrate 100. For convenience of explanation, FIG. 2 illustrates pixelsP1 (hereinafter, referred to as first pixels) adjacent to thethrough-hole TH among the plurality of pixels P.

A buffer layer 101 is disposed on the substrate 100. The buffer layer101 may reduce or prevent infiltration of a foreign material, moisture,or ambient air below the substrate 100 and may provide a flat surface tothe substrate 100. The buffer layer 101 may include an inorganicmaterial, such as oxide, nitride and/or the like.

A pixel circuit 140 including a thin film transistor (TFT) 130 and astorage capacitor 150 is positioned on the buffer layer 101.

The TFT 130 includes an active layer 131, a gate electrode 132, a sourceelectrode 133, and a drain electrode 134. The gate insulating layer 103is between the active layer 131 and the gate electrode 132, and theinterlayer insulating layer 107 is between the gate electrode 132 andthe source and drain electrodes 133 and 134. Although a top gate-typetransistor in which the gate electrode 132 is disposed above the activelayer 131 is illustrated in the present embodiment, embodiments are notlimited thereto. According to another embodiment, the TFT 130 may be abottom gate-type transistor.

The active layer 131 may include amorphous silicon, polycrystallinesilicon, and/or the like. According to another embodiment, the activelayer 131 may include oxide of at least one of indium (In), gallium(Ga), stannum (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium(Cd), germanium (Ge), chromium (Cr), titanium (Ti), zinc (Zn), and/orthe like.

The gate insulating layer 103 may include an inorganic materialincluding oxide, nitride, and/or the like. For example, the gateinsulating layer 103 may include silicon oxide (SiO₂), silicon nitride(SiNx), silicon oxynitride (SiON), aluminum oxide (Al₂O₃), titaniumoxide (TiO₂), tantalum oxide (Ta₂O₅), hafnium oxide (HfO₂), zinc oxide(ZnO₂), and/or the like.

The gate electrode 132 may include a low resistance metal material. Forexample, the gate electrode 132 may include a conductive materialincluding molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti),and/or the like, and may include a single layer or multi-layersincluding the aforementioned materials.

The interlayer insulating layer 107 may include an inorganic materialincluding oxide, nitride, and/or the like. For example, the interlayerinsulating layer 107 may include silicon oxide (SiO₂), silicon nitride(SiNx), silicon oxynitride (SiON), aluminum oxide (Al₂O₃), titaniumoxide (TiO₂), tantalum oxide (Ta₂O₅), hafnium oxide (HfO₂), zinc oxide(ZnO₂), and/or the like.

The source and drain electrodes 133 and 134 may include a conductivematerial. For example, each of the source and drain electrodes 133 and134 may include a conductive material including molybdenum (Mo),aluminum (Al), copper (Cu), and/or titanium (Ti), and may includemultiple layers or a single layer including the aforementionedmaterials. According to a non-restrictive embodiment, each of the sourceand drain electrodes 133 and 134 may have a multi-layer structure ofTi/Al/Ti.

The storage capacitor 150 includes a lower electrode 151 and an upperelectrode 152 positioned on different layers with the interlayerinsulating layer 107 therebetween. According to an embodiment, the lowerelectrode 151 may be disposed on the same layer on which the gateelectrode 132 is disposed, and the upper electrode 152 may be disposedon the same layer on which the source and drain electrodes 133 and 134are disposed.

An OLED 200 is electrically connected to the pixel circuit 140 with theplanarization insulating layer 109 therebetween. The OLED 200 includes apixel electrode layer 210, the intermediate layer 220 disposed on thepixel electrode layer 210, and the opposite electrode layer 230 disposedon the intermediate layer 220.

The pixel electrode layer 210 may be a transparent (or semi-transparent)electrode or a reflective electrode. The (semi-)transparent electrodemay include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide(ZnO), indium oxide (In₂O₃), indium gallium oxide (IGO), aluminum zincoxide (AZO), and/or the like. The reflective electrode may include areflective layer including silver (Ag), magnesium (Mg), aluminum (Al),platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd),iridium (Ir), chromium (Cr), or a combination thereof, and may furtherinclude a layer formed of ITO, IZO, ZnO, In₂O₃, and/or the like on thereflective layer.

In the magnified portion of FIG. 2, the intermediate layer 220 mayinclude an organic emission layer 222, and a first functional layer 221and a second functional layer 223 respectively disposed above and belowthe organic emission layer 222.

The first functional layer 221 may include a hole transport layer (HTL)and/or a hole injection layer (HIL), and the second functional layer 223may include an electron transport layer (ETL) and/or an electroninjection layer (EIL). The intermediate layer 220 may selectivelyinclude the HTL, the HIL, the ETL, and the EIL according to someembodiments.

The opposite electrode layer 230 may be a reflective electrode or atransparent (or semi-transparent). The reflective electrode may includeat least one of Li, Ca, LiF/Ca, LiF/Al, Al, Ag, and Mg. The transparent(or semi-transparent) electrode may include a layer formed of Li, Ca,LiF/Ca, LiF/Al, Al, Mg and/or a compound thereof, and may furtherinclude a layer formed of a transparent (or semi-transparent) material,such as ITO, IZO, ZnO, In₂O₃, and/or the like on the afore-mentionedlayer.

At least one of the intermediate layer 220 and the opposite electrodelayer 230 extends toward the through-hole TH and covers the third areaA3 of the substrate 100 as shown in FIG. 2. According to the presentembodiment, for convenience of explanation, both the intermediate layer220 and the opposite electrode layer 230 extend toward the through-holeTH and cover the third area A3.

An interface between layers that constitute the intermediate layer 220and the opposite electrode layer 230 may serve as a path via whichexternal moisture permeates. When moisture permeates, the OLED 200 maybe degraded.

A stepped portion 400 is located in the third area A3 of the substrate100 and blocks the path via which external moisture permeates.

Referring to FIGS. 2 and 3, the stepped portion 400 is positioned withina recess RC included in the interlayer insulating layer 107. The recessRC is concave in a thickness direction of the interlayer insulatinglayer 107. The stepped portion 400 includes a first layer 410 and asecond layer 420 disposed over the first layer 410, and has an undercutstructure in which a width W1 of an upper surface (or upper portion) ofthe first layer 410 is less than a width W2 of a lower surface (or lowerportion) of the second layer 420.

The intermediate layer 220 and the opposite electrode layer 230 aredisconnected by the stepped portion 400 having an under-cut step in thethird area A3. Because the intermediate layer 220 and the oppositeelectrode layer 230 are disconnected by the stepped portion 400, evenwhen moisture permeates along the interface between the layers thatconstitute the intermediate layer 220 and the opposite electrode layer230 via the through-hole TH, the moisture may be prevented orsubstantially prevented from heading toward the OLED 200.

A thickness T of the first layer 410 may be greater than a thickness tof at least one of the intermediate layer 220 and the opposite electrodelayer 230. In this case, the disconnection of the intermediate layer 220and the opposite electrode layer 230 may be more effectively induced.

The first layer 1 may include metal. For example, the first layer 410may be disposed on the same layer on which the gate electrode 132 of theTFT 130 and/or the lower electrode 151 of the storage capacitor 150 aredisposed, and may include the same or substantially the same material asthat used to form the gate electrode 132 of the TFT 130 and/or the lowerelectrode 151 of the storage capacitor 150.

The second layer 420 may include the same or substantially the samematerial as that used to form the interlayer insulating layer 107.

The protection layer 300 is disposed on the substrate 100 and covers atleast one of the intermediate layer 220 and the opposite electrode layer230 disconnected by the stepped portion 400.

The protection layer 300 includes at least one of an inorganic layer 310and an organic layer 320 including organic-inorganic compositeparticles.

The inorganic layer 310 may include silicon oxide (SiO₂), siliconnitride (SiNx), silicon oxynitride (SiON), aluminum oxide (Al₂O₃),titanium oxide (TiO₂), tantalum oxide (Ta₂O₅), hafnium oxide (HfO₂),zinc oxide (ZnO₂), and/or the like.

The organic layer 320 including the organic-inorganic compositeparticles is an organic layer in which organic-inorganic compositeparticles are formed within a free volume. The organic layer 320including the organic-inorganic composite particles may be formed, forexample, by sequential vapor infiltration (SVI).

For example, an organic layer including acryl, polyolefin, polyimide(PI), polyurethane, polyethylene terephthalate (PET), polyethylenenaphthalate (PEN), polybutylene terephthalate (PBT), polyethersulfone(PES), and/or the like is formed. Thereafter, an inorganic material isinfiltrated into the free volume existing within the organic layer tothereby form the organic layer 320 including the organic-inorganiccomposite particles. Inorganic particles infiltrated into the freevolume are chemically combined with a chemical reactor of an organicmaterial used to form the organic layer to thereby form theorganic-inorganic composite particles. Barrier characteristics ofblocking moisture via the organic-inorganic composite particles withinthe free volume may improve.

FIGS. 4A-4G are cross-sectional views illustrating a method ofmanufacturing an organic light-emitting display, according to anembodiment of the present invention. FIGS. 4A-4G correspond to a methodof manufacturing the organic light-emitting display 1 shown in FIGS. 2and 3.

Referring to FIG. 4A, the buffer layer 101 is formed on the substrate100 including the first through third areas A1, A2, and A3, and asemiconductor layer is formed on the buffer layer 101 and then patternedto thereby form the active layer 131 in the second area A2. The bufferlayer 101 may include an inorganic material such as oxide, nitride,and/or the like.

The active layer 131 may include amorphous silicon, polycrystallinesilicon, and/or the like. According to another embodiment, the activelayer 131 may include oxide of at least one selected from the groupconsisting of indium (In), gallium (Ga), stannum (Sn), zirconium (Zr),vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr),titanium (Ti), and zinc (Zn).

Thereafter, the gate insulating layer 103 is formed on the substrate100, and a metal layer is formed and then patterned to thereby form thegate electrode 132 of the TFT 130 in the second area A2, the lowerelectrode 151 of the storage capacitor 150 in the second area A2, and apreliminary first layer 410′ in the third area A3.

The gate insulating layer 103 may include an inorganic materialincluding oxide or nitride, and materials thereof are as describedabove.

The gate electrode 132, the lower electrode 151, and the preliminaryfirst layer 410′ are positioned on the same layer and include the sameor substantially the same material. The preliminary first layer 410′,the gate electrode 132, and the lower electrode 151 may include a lowresistance metal material. For example, the preliminary first layer410′, the gate electrode 132, and the lower electrode 151 may include aconductive material including molybdenum (Mo), aluminum (Al), copper(Cu), titanium (Ti), and/or the like, and may include a single layer ormulti-layers including the aforementioned materials.

Next, the interlayer insulating layer 107 is formed on the substrate100. The interlayer insulating layer 107 may include an inorganicmaterial including oxide or nitride, and materials thereof are asdescribed above.

Referring to FIG. 4B, holes are formed in the interlayer insulatinglayer 107 via etching, for example. Via wet or dry etching, first holesH1 and second holes H2 are formed in the interlayer insulating layer107. The first holes H1 are located in the second area A2, and thesecond holes H2 are located in the third area A3.

Some regions of the active layer 131 in the second area A2, for example,a source region and a drain region, are exposed via the first holes H1.An end of the preliminary first layer 410′ in the third area A3 areexposed via the second holes H2.

During the etching process for forming the second holes H2, a portion ofthe interlayer insulating layer 107 remains on the preliminary firstlayer 410′. The portion of the interlayer insulating layer 107 remainingon the preliminary first layer 410′ corresponds to the second layer 420of the stepped portion 400 described above with reference to FIG. 2.

Referring to FIG. 4C, a metal layer is formed on the interlayerinsulating layer 107 and then patterned to thereby form the source anddrain electrodes 133 and 134 of the TFT 130 and the upper electrode 152of the storage capacitor 150.

The source and drain electrodes 133 and 134 are connected to the someregions of the active layer 131, for example, the source region and thedrain region, respectively, which are exposed via the first holes H1.The upper electrode 152 overlaps the lower electrode 151 with theinterlayer insulating layer 107 therebetween.

The source and drain electrodes 133 and 134 and the upper electrode 152are positioned on the same layer and include the same or substantiallythe same material. For example, the source and drain electrodes 133 and134 and the upper electrode 152 may include a conductive material. Forexample, the source and drain electrodes 133 and 134 and the upperelectrode 152 may include a conductive material including molybdenum(Mo), aluminum (Al), copper (Cu), titanium (Ti), and/or the like, andmay include multiple layers or a single layer including theaforementioned materials. According to a non-restrictive embodiment,each of the source and drain electrodes 133 and 134 may have amulti-layer structure of Ti/Al/Ti.

Referring to FIG. 4D, the planarization insulating layer 109 is formedin the second area A2 of the substrate 100.

The planarization insulating layer 109 may include a commercial polymersuch as polymethyl methacrylate (PMMA) or polystyrene (PS), a polymerderivative having a phenol-based group, an acryl-based polymer, animide-based polymer, an acryl ether-based polymer, an amide-basedpolymer, a fluorine-based polymer, a p-xylene-based polymer, a vinylalcohol-based polymer, a blend thereof, and/or the like.

Thereafter, a conductive layer is formed on the planarization insulatinglayer 109 and then patterned to form the pixel electrode layer 210. Theconductive layer may be patterned via wet etching to form the pixelelectrode layer 210.

During the formation of the pixel electrode layer 210, the steppedportion 400 is also formed. While the end of the preliminary first layer410′ exposed via the second holes H2 are being etched (under-cut etched)by an etchant used during the etching process for forming the pixelelectrode layer 210, the first layer 410 is formed. The first layer 410may be narrower than the second layer 420. Via undercut etching, thefirst layer 410 and the second layer 420 previously formed over thefirst layer 410 form the stepped portion 400. The upper surface (orupper portion) of the first layer 410 is narrower than the lower surface(or lower portion) of the second layer 420.

Referring to FIG. 4E, the pixel defining layer 110 exposing the pixelelectrode layer 210 is formed on the substrate 100, and the intermediatelayer 220 and the opposite electrode layer 230 are formed on the pixeldefining layer 110.

At least one of the intermediate layer 220 and the opposite electrodelayer 230 covers an entire upper surface of the substrate 100. Forconvenience of explanation, a case where both the intermediate layer 220and the opposite electrode layer 230 cover the entire upper surface ofthe substrate 100 will now be described.

The intermediate layer 220 includes an organic emission layer. Theintermediate layer 220 may further include at least one of an HTL, anHIL, an ETL, and an EIL according to embodiments. According to anon-restrictive embodiment, the intermediate layer 220 may be formed viaa deposition process using a fine metal mask (FMM), and the oppositeelectrode layer 230 may be formed via vacuum deposition and/or the like.

During the formation of the intermediate layer 220 and the oppositeelectrode layer 230, the intermediate layer 220 and the oppositeelectrode layer 230 are disconnected by the stepped portion 400 havingan under-cut structure. As described above, the disconnection may beeffectively induced by forming the first layer 410 of the steppedportion 400 to have a greater thickness than at least one of theintermediate layer 220 and the opposite electrode layer 230.

Referring to FIG. 4F, the protection layer 300 is formed on thesubstrate 100. The protection layer 300 includes at least one of theorganic layer 320 including organic-inorganic composite particles andthe inorganic layer 310.

The inorganic layer 310 may include silicon oxide (SiO₂), siliconnitride (SiNx), silicon oxynitride (SiON), aluminum oxide (Al₂O₃),titanium oxide (TiO₂), tantalum oxide (Ta₂O₅), hafnium oxide (HfO₂),zinc oxide (ZnO₂), and/or the like, and may be formed by chemical vapordeposition.

The organic layer 320 including the organic-inorganic compositeparticles may be formed by SVI.

First, an organic layer including an organic material such as polymer isformed on the substrate 100. For example, the organic layer may includeacryl, polyolefin, polyimide (PI), polyurethane, polyethyleneterephthalate (PET), polyethylene naphthalate (PEN), polybutyleneterephthalate (PBT), polyethersulfone (PES), and/or the like.

Then, an inorganic material is infiltrated into a free volume existingwithin the organic layer by SVI. The inorganic material may include Al,Si, and/or the like. The inorganic material infiltrated into the freevolume is chemically combined with a chemical reactor of the organiclayer to thereby form the organic-inorganic composite particles. Theorganic layer including the organic-inorganic composite particles hasbarrier characteristics of blocking moisture.

Referring to FIG. 4G, the through-hole (e.g., opening) TH penetratingthrough the first area A1 of the substrate 100 is formed by using laserand/or the like.

In the magnified portion of FIG. 4G, the layers that constitute theintermediate layer 220 and the opposite electrode layer 230 are exposedvia a process of forming the through-hole TH. External moisture H₂O mayhead toward the OLED 200 via the interface between the layers exposedvia the through-hole TH.

However, according to an embodiment, because the layers that constitutethe intermediate layer 220 and the opposite electrode layer 230 aredisconnected by the stepped portion 400, moisture infiltrated along theinterface between the layers may be prevented or substantially preventedfrom heading toward the OLED 200.

FIG. 5 is a cross-sectional view of an organic light-emitting displayaccording to another embodiment of the present invention.

The organic light-emitting display of FIG. 5 is different from theorganic light-emitting display 1 described above with reference to FIG.2 in terms of a storage capacitor 150′, an interlayer insulating layer107′, and stepped portions 400A and 400B. Differences therebetween willnow be focused on and further described.

The storage capacitor 150′ in the second area A2 of the substrate 100may overlap the TFT 130.

According to an embodiment, a lower electrode 151′ of the storagecapacitor 150′ may be disposed on the same layer on which the gateelectrode 132 of the TFT 130 is disposed, and may include the same orsubstantially the same material as that used to form the gate electrode132. For example, the gate electrode 132 of the TFT 130 may perform afunction of the lower electrode 151′ of the storage capacitor 150′.

According to an embodiment, an upper electrode 152′ of the storagecapacitor 150′ may be disposed between the gate electrode 132 of the TFT130 and the source and drain electrodes 133 and 134.

The upper electrode 152′ may include a conductive material includingmolybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), and/or thelike, and may include multiple layers or a single layer including theaforementioned materials. According to a non-restrictive embodiment, theupper electrode 152′ may have a multi-layer structure of Mo/Al/Mo.

The interlayer insulating layer 107′ may include a first interlayerinsulating layer 105 between the lower electrode 151′ and the upperelectrode 152′ of the storage capacitor 150′, and a second interlayerinsulating layer 106 between the upper electrode 152′ of the storagecapacitor 150′ and the source and drain electrodes 133 and 134 of theTFT 130.

The first and second interlayer insulating layers 105 and 106 mayinclude an inorganic material. The first and second interlayerinsulating layers 105 and 106 may include oxide or nitride. For example,the first and second interlayer insulating layers 105 and 106 mayinclude silicon oxide (SiO₂), silicon nitride (SiNx), silicon oxynitride(SiON), aluminum oxide (Al₂O₃), titanium oxide (TiO₂), tantalum oxide(Ta₂O₅), hafnium oxide (HfO₂), zinc oxide (ZnO₂), and/or the like.

A recess RC included in the interlayer insulating layer 107′ is locatedin the third area A3 of the substrate 100, and the plurality of steppedportions 500A and 500B having a undercut structure are included. Forconvenience of explanation, one of the plurality of stepped portions500A and 500B is referred to as a first stepped portion 500A, and theother is referred to as a second stepped portion 500B.

The first stepped portion 500A includes a first layer 510A and a secondlayer 520A disposed over the first layer 510A, and has an undercutstructure in which an upper surface (or upper portion) of the firstlayer 510A is narrower than a lower surface (or lower portion) of thesecond layer 520A.

During the formation of the intermediate layer 220 and the oppositeelectrode layer 230, the intermediate layer 220 and the oppositeelectrode layer 230 are disconnected by the first stepped portion 500Ahaving an under-cut step. The first layer 510A of the first steppedportion 500A may be formed to have a greater thickness than at least oneof the intermediate layer 220 and the opposite electrode layer 230, andthus the disconnection of the intermediate layer 220 and the oppositeelectrode layer 230 may be effectively induced.

The first layer 510A of the first stepped portion 500A may includemetal. For example, the first layer 510A may be disposed on the samelayer on which the gate electrode 132 of the TFT 130 and the lowerelectrode 151′ of the storage capacitor 150′ are disposed, and mayinclude the same or substantially the same material as that used to formthe gate electrode 132 of the TFT 130 and the lower electrode 151′ ofthe storage capacitor 150′.

The second layer 520A of the first stepped portion 500A may include thesame material as that used to form the interlayer insulating layer 107′.For example, the second layer 520A may be formed as a double layerincluding the same or substantially the same material as that used toform the first and second interlayer insulating layers 105 and 106.

The second stepped portion 500B includes a first layer 510B and a secondlayer 520B disposed over the first layer 510B, and has an undercutstructure in which an upper surface (or upper portion) of the firstlayer 510B is narrower than a lower surface (or lower portion) of thesecond layer 520B.

During the formation of the intermediate layer 220 and the oppositeelectrode layer 230, the intermediate layer 220 and the oppositeelectrode layer 230 are disconnected by the second stepped portion 500Bhaving an under-cut step. The first layer 510B of the second steppedportion 500B may be formed to have a greater thickness than at least oneof the intermediate layer 220 and the opposite electrode layer 230, andthus the disconnection of the intermediate layer 220 and the oppositeelectrode layer 230 may be effectively induced.

The first layer 510B of the second stepped portion 500B may includemetal. For example, the first layer 510B may be disposed on the samelayer on which the upper electrode 152′ of the storage capacitor 150′ isdisposed, and may include the same or substantially the same material asthat used to form the upper electrode 152′ of the storage capacitor150′.

The second layer 520B of the second stepped portion 500B may include thesame or substantially the same material as that used to form the secondinterlayer insulating layer 106.

FIGS. 6A-6F are cross-sectional views illustrating a method ofmanufacturing an organic light-emitting display, according to anotherembodiment of the present invention. FIGS. 6A-7F correspond to a methodof manufacturing the organic light-emitting display described above withreference to FIG. 5.

Referring to FIG. 6A, the buffer layer 101 is formed on the substrate100 including the first through third areas A1, A2, and A3, and asemiconductor layer is formed on the buffer layer 101 and then patternedto thereby form the active layer 131 in the second area A2. Materialsused to form the buffer layer 101 and the active layer 131 are asdescribed above.

Thereafter, the gate insulating layer 103 is formed on the substrate100, and a metal layer is formed and then patterned to thereby form thegate electrode 132 of the TFT 130 in the second area A2, the lowerelectrode 151′ of the storage capacitor 150′ in the second area A2, anda preliminary first layer 510A′ (hereinafter, referred to as a firstpreliminary first layer) in the third area A3.

Next, the first interlayer insulating layer 105 is formed on thesubstrate 100, and a metal layer is formed and then patterned to therebyform the upper electrode 152′ of the storage capacitor 150′ in thesecond area A2 and a preliminary first layer 510B′ (hereinafter,referred to as a second preliminary first layer) in the third area A3.

The first preliminary first layer 510A′ is disposed on the same layer onwhich the gate electrode 132 of the TFT 130 and the lower electrode 151′of the storage capacitor 150′ are disposed, and includes the same orsubstantially the same material as that used to form the gate electrode132 of the TFT 130 and the lower electrode 151′ of the storage capacitor150′. The second preliminary first layer 510B′ is disposed on the samelayer on which the upper electrode 152′ of the storage capacitor 150′ isdisposed, and includes the same or substantially the same material asthat used to form the upper electrode 152′ of the storage capacitor150′.

The second interlayer insulating layer 106 is formed on the substrate100 to cover the first preliminary first layer 510A′ and the secondpreliminary first layer 510B′.

Referring to FIG. 6B, holes penetrating through the interlayerinsulating layer 107′ are formed via etching. For example, first holesH1 and second holes H2 penetrating through the first and secondinterlayer insulating layers 105 and 106 are formed via wet or dryetching. The first holes H1 are located in the second area A2, and thesecond holes H2 are located in the third area A3.

Some regions of the active layer 131 in the second area A2, for example,a source region and a drain region, are exposed via the first holes H1.Ends of the first and second preliminary first layers 510A′ and 510B′ inthe third area A3 are exposed via the second holes H2.

Referring to FIG. 6C, a metal layer is formed on the interlayerinsulating layer 107′ and then patterned to thereby form the source anddrain electrodes 133 and 134 of the TFT 130. The source and drainelectrodes 133 and 134 are respectively connected to the some regions ofthe active layer 131, for example, the source region and the drainregion, exposed via the first holes H1 (see, e.g., FIG. 6B).

Referring to FIG. 6D, the planarization insulating layer 109 is formedin the second area A2 of the substrate 100, and a conductive layer isformed on the planarization insulating layer 109 and then patterned toform the pixel electrode layer 210.

During the formation of the pixel electrode layer 210, the first andsecond stepped portions 500A and 500B are also formed. For example,while the ends of the first and second preliminary first layer 510A′ and510B′ exposed via the second holes H2 are being etched (under-cutetched) by an etchant used during the etching process for forming thepixel electrode layer 210, the first layers 510A and 510B, which arenarrower than the second layers 520A and 520B, are formed.

The first layers 510A and 510B and the second layers 520A and 520B formthe first and second stepped portions 500A and 500B, respectively. Theupper surfaces (or upper portions) of the first layers 510A and 510B arenarrower than the lower surfaces (or lower portions) of the secondlayers 520A and 520B.

Referring to FIG. 6E, the pixel defining layer 110 exposing the pixelelectrode layer 210 is formed on the substrate 100, and the intermediatelayer 220 and the opposite electrode layer 230 are formed on the pixeldefining layer 110. At least one of the intermediate layer 220 and theopposite electrode layer 230 covers an entire upper surface of thesubstrate 10, but is disconnected by the first and second steppedportions 500A and 500B.

Referring to FIG. 6F, the protection layer 300 is formed on thesubstrate 100, and then the through-hole (e.g., the opening) THpenetrating through the first area A1 of the substrate 100 is formed.

The protection layer 300 includes at least one of the organic layer 320including organic-inorganic composite particles and the inorganic layer310, and materials thereof are as described above.

FIG. 7 is a cross-sectional view of an organic light-emitting displayaccording to another embodiment of the present invention.

The organic light-emitting display of FIG. 7 is different from theorganic light-emitting display of FIG. 5 in terms of the structure of astepped portion. Differences therebetween will now be focused on andfurther described.

A first stepped portion 600A includes a first layer 610A and a secondlayer 620A disposed over the first layer 610A, and has an undercutstructure in which an upper surface (or upper portion) of the firstlayer 610A is narrower than a lower surface (or lower portion) of thesecond layer 620A.

During the formation of the intermediate layer 220 and the oppositeelectrode layer 230, the intermediate layer 220 and the oppositeelectrode layer 230 are disconnected by the first stepped portion 600Ahaving an under-cut step. The first layer 610A of the first steppedportion 600A may be formed to have a greater thickness than at least oneof the intermediate layer 220 and the opposite electrode layer 230, andthus the disconnection of the intermediate layer 220 and the oppositeelectrode layer 230 may be effectively induced.

The first layer 610A of the first stepped portion 600A may includemetal. For example, the first layer 610A may be disposed on the samelayer on which the gate electrode 132 of the TFT 130 and the lowerelectrode 151′ of the storage capacitor 150′ are disposed, and mayinclude the same or substantially the same material as that used to formthe gate electrode 132 of the TFT 130 and the lower electrode 151′ ofthe storage capacitor 150′.

The second layer 620A of the first stepped portion 600A may include thesame or substantially the same material as that used to form theinterlayer insulating layer 107′. For example, the second layer 620A maybe formed as a double layer including the same or substantially the samematerial as that used to form the first and second interlayer insulatinglayers 105 and 106.

The second stepped portion 600B may include first layers 610B1 and 610B2and second layers 620B1 and 620B2S that are alternately stacked one onanother. Upper surfaces (or upper portions) of the first layers 610B1and 610B2 are narrower than lower surfaces (or lower portions) of thesecond layers 620B1 and 620B2 directly above the first layers 610B1 and610B2, respectively.

During the formation of the intermediate layer 220 and the oppositeelectrode layer 230, the intermediate layer 220 and the oppositeelectrode layer 230 are disconnected by the second stepped portion 600Bhaving an under-cut step. The first layer 610B1, the second layer 620B1,and the first layer 610B2 disposed below the second layer 620B2corresponding to an uppermost layer of the second stepped portion 600Bmay be thicker than at least one of the intermediate layer 220 and theopposite electrode layer 230, and thus the disconnection of theintermediate layer 220 and the opposite electrode layer 230 may beeffectively induced.

The first layers 610B1 and 610B2 of the second stepped portion 600B mayinclude metal. For example, the first layer 610B1 may be disposed on thesame layer on which the gate electrode 132 of the TFT 130 and the lowerelectrode 151′ of the storage capacitor 150′ are disposed, and mayinclude the same or substantially the same material as that used to formthe gate electrode 132 of the TFT 130 and the lower electrode 151′ ofthe storage capacitor 150′. The first layer 610B2 may be disposed on thesame layer on which the upper electrode 152′ of the storage capacitor150′ is disposed, and may include the same or substantially the samematerial as that used to form the upper electrode 152′ of the storagecapacitor 150′.

The second layers 620B1 and 620B2 of the second stepped portion 600B mayinclude an insulative material used to form the insulating layer 107′.For example, the second layer 620B1 may be disposed on the same layer onwhich the first interlayer insulating layer 105 is disposed, and mayinclude the same or substantially the same material as that used to formthe first interlayer insulating layer 105. The second layer 620B2 may bedisposed on the same layer on which the second interlayer insulatinglayer 106 is disposed, and may include the same or substantially thesame material as that used to form the second interlayer insulatinglayer 106.

FIGS. 8A-8E are cross-sectional views illustrating a method ofmanufacturing an organic light-emitting display, according to anotherembodiment of the present invention. FIGS. 8A-8E correspond to a methodof manufacturing the organic light-emitting display described above withreference to FIG. 7.

Referring to FIG. 8A, the buffer layer 101 is formed on the substrate100 including the first through third areas A1, A2, and A3, and asemiconductor layer is formed on the buffer layer 101 and then patternedto thereby form the active layer 131 in the second area A2. Materialsused to form the buffer layer 101 and the active layer 131 are asdescribed above.

Thereafter, the gate insulating layer 103 is formed on the substrate100, and a metal layer is formed and then patterned to thereby form thegate electrode 132 of the TFT 130 in the second area A2, the lowerelectrode 151′ of the storage capacitor 150′ in the second area A2, anda preliminary first layer 610A′ (hereinafter, referred to as a firstpreliminary first layer) in the third area A3.

Next, the first interlayer insulating layer 105 is formed on thesubstrate 100, and a metal layer is formed and then patterned to therebyform the upper electrode 152′ of the storage capacitor 150′ in thesecond area A2 and a preliminary first layer 610B′ (hereinafter,referred to as a second preliminary first layer) in the third area A3.

The first preliminary first layer 610A′ is disposed on the same layer onwhich the gate electrode 132 of the TFT 130 and the lower electrode 151′of the storage capacitor 150′ are disposed, and includes the same orsubstantially the same material as that used to form the gate electrode132 of the TFT 130 and the lower electrode 151′ of the storage capacitor150′. The second preliminary first layer 610B′ is disposed on the samelayer on which the upper electrode 152′ of the storage capacitor 150′ isdisposed, and includes the same or substantially the same material asthat used to form the upper electrode 152′ of the storage capacitor150′. The second preliminary first layer 610B′ may overlap a portion ofthe first preliminary first layer 610A′.

The second interlayer insulating layer 106 is formed on the substrate100 to cover the first preliminary first layer 610A′ and the secondpreliminary first layer 610B′.

Referring to FIG. 8B, holes penetrating through the interlayerinsulating layer 107′ are formed via etching. For example, first holesH1 and second holes H2 penetrating through the first and secondinterlayer insulating layers 105 and 106 are formed via wet or dryetching. The first holes H1 are located in the second area A2, and thesecond holes H2 are located in the third area A3.

Some regions of the active layer 131 in the second area A2, for example,a source region and a drain region, are exposed via the first holes H1.Ends of the first and second preliminary first layers 610A′ and 610B′ inthe third area A3 are exposed via the second holes H2, and insulatinglayers remain on the first preliminary first layer 610A′ and the secondpreliminary first layer 610B2′. The remaining insulating layers form thesecond layers 620A, 620B1, and 620B2 of the first and second steppedportions 600A and 600B, which will be described later.

Referring to FIG. 8C, a metal layer is formed on the interlayerinsulating layer 107′ and then patterned to thereby form the source anddrain electrodes 133 and 134 of the TFT 130. The source and drainelectrodes 133 and 134 are respectively connected to the some regions ofthe active layer 131, for example, the source region and the drainregion, exposed via the first holes H1 (see, e.g., FIG. 8B).

Then, the planarization insulating layer 109 is formed in the secondarea A2 of the substrate 100, and a conductive layer is formed on theplanarization insulating layer 109 and then patterned to form the pixelelectrode layer 210.

During the formation of the pixel electrode layer 210, the first andsecond stepped portions 600A and 600B are also formed. For example,while the ends of the first and second preliminary first layer 610A′ and610B′ exposed via the second holes H2 are being etched (under-cutetched) by an etchant used during the etching process for forming thepixel electrode layer 210, the first layers 610A, 610B1, and 610B2,which are narrower than the second layers 620A, 620B1, and 620B2, areformed.

The first layers 610A, 610B1, and 610B2 and the second layers 620A,620B1, and 620B2 having different widths via undercut etching form thefirst and second stepped portions 600A and 600B. An upper surface (orupper portion) of each of the first layers 610A, 610B1, and 610B2 isnarrower than a lower surface (or lower portion) of each of the secondlayers 620A, 620B1, and 620B2.

Referring to FIG. 8D, the pixel defining layer 110 exposing the pixelelectrode layer 210 is formed on the substrate 100, and the intermediatelayer 220 and the opposite electrode layer 230 are formed on the pixeldefining layer 110. At least one of the intermediate layer 220 and theopposite electrode layer 230 covers an entire upper surface of thesubstrate 10, but is disconnected by the first and second steppedportions 600A and 600B.

Referring to FIG. 8E, the protection layer 300 is formed on thesubstrate 100, and then the through-hole (e.g., the opening) THpenetrating through the first area A1 of the substrate 100 is formed.

The protection layer 300 includes at least one of the organic layer 320including organic-inorganic composite particles and the inorganic layer310, and materials thereof are as described above.

FIG. 9 is a cross-sectional view of an organic light-emitting displayaccording to another embodiment of the present invention.

The organic light-emitting display of FIG. 9 is different from theorganic light-emitting display of FIG. 5 in terms of the structure of astepped portion. Differences therebetween will now be focused on andfurther described.

A stepped portion 700 includes a first layer 710 and a second layer 720disposed over the first layer 710, and has an undercut structure inwhich an upper surface (or upper portion) of the first layer 710 isnarrower than a lower surface (or lower portion) of the second layer720.

During the formation of the intermediate layer 220 and the oppositeelectrode layer 230, the intermediate layer 220 and the oppositeelectrode layer 230 are disconnected by the stepped portion 700 havingan under-cut step. The first layer 710 of the stepped portion 700 may beformed to have a greater thickness than at least one of the intermediatelayer 220 and the opposite electrode layer 230, and thus thedisconnection of the intermediate layer 220 and the opposite electrodelayer 230 may be effectively induced.

The first layer 710 of the stepped portion 700 may include metal. Forexample, the first layer 710 may be disposed on the same layer on whichthe source and drain electrodes 133 and 134 of the TFT 130 are disposed,and may include the same or substantially the same material as that usedto form the source and drain electrodes 133 and 134 of the TFT 130.

The second layer 720 of the stepped portion 700 may include the same orsubstantially the same material as that used to form a protectiveinsulating layer 108 positioned on the interlayer insulating layer 107′.The protective insulating layer 108 may include an inorganic materialincluding oxide or nitride.

FIGS. 10A-10E are cross-sectional views illustrating a method ofmanufacturing an organic light-emitting display, according to anotherembodiment of the present invention. FIGS. 10A-10E correspond to amethod of manufacturing the organic light-emitting display describedabove with reference to FIG. 9.

Referring to FIG. 10A, the buffer layer 101 is formed on the substrate100 including the first through third areas A1, A2, and A3, and the TFT130 and the storage capacitor 150′ are formed in the second area A2. Adetailed method of forming the TFT 130 and the storage capacitor 150′ issubstantially as described above with reference to FIGS. 6A-6F and FIGS.8A-8E.

A preliminary first layer 710′ is formed together with the source anddrain electrodes 133 and 134 of the TFT 130 during the same process. Thepreliminary first layer 710′ is formed on the same layer on which thesource and drain electrodes 133 and 134 are formed, and includes thesame or substantially the same material as that used to form the sourceand drain electrodes 133 and 134.

The protective insulating layer 108 is formed on the source electrode133, the drain electrode 134, and the preliminary first layer 710′.

Referring to FIG. 10B, holes penetrating through the protectiveinsulating layer 108 are formed via etching. For example, first holesH1′ and second holes H2′ penetrating through the protective insulatinglayer 108 are formed via wet or dry etching. The first holes H1′ arelocated in the second area A2, and the second holes H2′ are located inthe third area A3.

One of the source and drain electrodes 133 and 134 in the second area A2is exposed via the first holes H1′. An end of the preliminary firstlayer 710′ in the third area A3 is exposed via the second holes H2′, andan insulating layer remains on the preliminary first layer 710′. Theremaining insulating layer forms the second layer 720 of the steppedportion 700, which will be described later.

Referring to FIG. 10C, the planarization insulating layer 109 is formedin the second area A2 of the substrate 100, and a conductive layer isformed on the planarization insulating layer 109 and then patterned toform the pixel electrode layer 210.

During the formation of the pixel electrode layer 210, the steppedportion 700 is also formed. While the end of the preliminary first layer710′ exposed via the second holes H2′ is being etched (under-cut etched)by an etchant used during the etching process for forming the pixelelectrode layer 210, the first layer 710 is formed. The first layer 710may be narrower than the second layer 720.

The first layer 710 and the second layer 720 having different widthsform the stepped portion 700 via undercut etching. The upper surface (orupper portion) of the first layer 710 is narrower than the lower surface(or lower portion) of the second layer 720.

Referring to FIG. 10D, the pixel defining layer 110 exposing the pixelelectrode layer 210 is formed on the substrate 100, and the intermediatelayer 220 and the opposite electrode layer 230 are formed on the pixeldefining layer 110. At least one of the intermediate layer 220 and theopposite electrode layer 230 covers an entire upper surface of thesubstrate 100, but is disconnected by the stepped portion 700.

Referring to FIG. 10E, the protection layer 300 is formed on thesubstrate 100, and then the through-hole (e.g., the opening) THpenetrating through the first area A1 of the substrate 100 is formed.

The protection layer 300 includes at least one of the organic layer 320including organic-inorganic composite particles and the inorganic layer310, and materials thereof are as described above.

FIGS. 11A-11C illustrate electronic apparatuses including organiclight-emitting displays according to embodiments of the presentinvention.

Referring to FIG. 11A, the organic light-emitting displays according tothe above-described embodiments may be included in a mobile phone 1000.A pixel array of the organic light-emitting displays according to theabove-described embodiments may form a display 1100 of the mobile phone1000, and a component 1200 such as a camera may be positioned within thethrough-hole TH.

The position of the through-hole TH is not limited to the positionillustrated in FIG. 11A. According to another embodiment, thethrough-hole TH may be disposed on the center of a bottom of the display1100 of the mobile phone 1000. In this case, a button may be positionedwithin the through-hole TH.

Referring to FIG. 11B, the organic light-emitting displays according tothe above-described embodiments may be included in a smart watch 2000. Apixel array of the organic light-emitting displays according to theabove-described embodiments may form a display 2100 of the smart watch2000, and a driving component DU including a minute hand and an hourhand may be disposed within the through-hole TH.

Referring to FIG. 11C, the organic light-emitting displays according tothe above-described embodiments may be included in a dashboard 3000 forvehicles. A pixel array of the organic light-emitting displays accordingto the above-described embodiments may form a display 3100 of thedashboard 3000 for vehicles. A plurality of through-holes (e.g., aplurality of openings) TH may be included.

According to an embodiment, the through-holes TH may respectivelyinclude a first driving component DU1 including a needle that displaysan engine RPM, and a second driving component DU2 including a needlethat displays a speed.

Embodiments of the present invention provide an organic light-emittingdisplay and a method of manufacturing the same, by which a steppedportion having an undercut structure is disposed to block a path viawhich moisture is infiltrated in a lateral direction.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments.

When a certain embodiment may be implemented differently, a specificprocess order may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order.

It will be understood that, although the terms “first”, “second”,“third”, etc., may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are used to distinguish one element, component, region,layer or section from another element, component, region, layer orsection. Thus, a first element, component, region, layer or sectiondiscussed below could be termed a second element, component, region,layer or section, without departing from the spirit and scope of theinventive concept.

Spatially relative terms, such as “beneath”, “below”, “lower”, “under”,“above”, “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. It will beunderstood that the spatially relative terms are intended to encompassdifferent orientations of the device in use or in operation, in additionto the orientation depicted in the figures. For example, if the devicein the figures is turned over, elements described as “below” or“beneath” or “under” other elements or features would then be oriented“above” the other elements or features. Thus, the example terms “below”and “under” can encompass both an orientation of above and below. Thedevice may be otherwise oriented (e.g., rotated 90 degrees or at otherorientations) and the spatially relative descriptors used herein shouldbe interpreted accordingly. In addition, it will also be understood thatwhen a layer is referred to as being “between” two layers, it can be theonly layer between the two layers, or one or more intervening layers mayalso be present.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting of the inventive concept.As used herein, the singular forms “a” and “an” are intended to includethe plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “include,”“including,” “comprises,” and/or “comprising,” when used in thisspecification, specify the presence of stated features, integers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof. As used herein,the term “and/or” includes any and all combinations of one or more ofthe associated listed items. Expressions such as “at least one of,” whenpreceding a list of elements, modify the entire list of elements and donot modify the individual elements of the list. Further, the use of“may” when describing embodiments of the inventive concept refers to“one or more embodiments of the inventive concept.” Also, the term“exemplary” is intended to refer to an example or illustration.

It will be understood that when an element or layer is referred to asbeing “on”, “connected to”, “coupled to”, or “adjacent” another elementor layer, it can be directly on, connected to, coupled to, or adjacentthe other element or layer, or one or more intervening elements orlayers may be present. When an element or layer is referred to as being“directly on,” “directly connected to”, “directly coupled to”, or“immediately adjacent” another element or layer, there are nointervening elements or layers present.

As used herein, the term “substantially,” “about,” and similar terms areused as terms of approximation and not as terms of degree, and areintended to account for the inherent variations in measured orcalculated values that would be recognized by those of ordinary skill inthe art.

As used herein, the terms “use,” “using,” and “used” may be consideredsynonymous with the terms “utilize,” “utilizing,” and “utilized,”respectively.

The organic light-emitting diode (OLED) display and/or any otherrelevant devices or components according to embodiments of the presentinvention described herein may be implemented utilizing any suitablehardware, firmware (e.g. an application-specific integrated circuit),software, or a suitable combination of software, firmware, and hardware.For example, the various components of the OLED display may be formed onone integrated circuit (IC) chip or on separate IC chips. Further, thevarious components of the OLED display may be implemented on a flexibleprinted circuit film, a tape carrier package (TCP), a printed circuitboard (PCB), or formed on a same substrate. Further, the variouscomponents of the OLED display may be a process or thread, running onone or more processors, in one or more computing devices, executingcomputer program instructions and interacting with other systemcomponents for performing the various functionalities described herein.The computer program instructions are stored in a memory which may beimplemented in a computing device using a standard memory device, suchas, for example, a random access memory (RAM). The computer programinstructions may also be stored in other non-transitory computerreadable media such as, for example, a CD-ROM, flash drive, or the like.Also, a person of skill in the art should recognize that thefunctionality of various computing devices may be combined or integratedinto a single computing device, or the functionality of a particularcomputing device may be distributed across one or more other computingdevices without departing from the scope of the exemplary embodiments ofthe present invention.

While one or more embodiments have been described with reference to thefigures, it will be understood by those of ordinary skill in the artthat various suitable changes in form and details may be made thereinwithout departing from the spirit and scope as defined by the followingclaims, and equivalents thereof.

What is claimed is:
 1. An organic light-emitting display comprising: asubstrate comprising a first area, a second area adjacent to the firstarea, and a third area between the first area and the second area; aninsulating layer on the substrate, each of the substrate and theinsulating layer having an opening in the first area; a pixel array onthe insulating layer, the pixel array comprising a plurality of pixelsthat are in the second area, a first pixel being adjacent to the thirdarea from among the plurality of pixels and comprises a pixel electrodelayer, an organic layer on the pixel electrode layer, and an oppositeelectrode layer on the organic layer; and a first portion in the thirdarea, the first portion having an under-cut step and being offset fromthe second area, wherein at least one of the organic layer or theopposite electrode layer extends toward the opening and is disconnectedby the first portion.
 2. The organic light-emitting display of claim 1,wherein the organic layer comprises a hole transport material, a holeinjection material, an emission material, an electron transportmaterial, and/or an electron injection material.
 3. The organiclight-emitting display of claim 1, wherein the opposite electrode layercomprises aluminum (Al), magnesium (Mg), silver (Ag), lithium (Li),calcium (Ca), or a compound thereof.
 4. The organic light-emittingdisplay of claim 1, wherein the first portion comprises a same materialas that of the insulating layer.
 5. The organic light-emitting displayof claim 1, wherein the insulating layer comprises a recess that isconcave in a thickness direction of the insulating layer, and whereinthe first portion is in the recess.
 6. The organic light-emittingdisplay of claim 1, the first portion comprises a first sub-portion anda second sub-portion stacked on the first sub-portion, wherein the firstsub-portion and the second sub-portion comprise different materials fromeach other.
 7. The organic light-emitting display of claim 6, wherein athickness of the first sub-portion is greater than a thickness of the atleast one of the organic layer or the opposite electrode layer.
 8. Theorganic light-emitting display of claim 6, wherein the first sub-portioncomprises a metal, and the second sub-portion comprises an insulationmaterial.
 9. The organic light-emitting display of claim 6, wherein awidth of the first sub-portion is less than a width of the secondsub-portion.
 10. The organic light-emitting display of claim 1, furthercomprising a protection layer that covers the pixel array and comprisesan inorganic protection layer and an organic protection layer.
 11. Theorganic light-emitting display of claim 10, wherein the organicprotection layer comprises organic-inorganic composite particles.
 12. Anorganic light-emitting display comprising: a substrate comprising afirst area, a second area adjacent to the first area, and a third areabetween the first area and the second area; at least one insulatinglayer on the substrate; a plurality of pixels on the at least oneinsulating layer, the plurality of pixels being in the second area, afirst pixel being adjacent to the third area from among the plurality ofpixels and comprising a pixel electrode layer, an opposite electrodelayer on the pixel electrode layer, and an intermediate layer betweenthe pixel electrode layer and the opposite electrode, wherein theintermediate layer comprises at least one organic layer; and anunder-cut step being offset with respect to the second area, theunder-cut step being located in the third area and disconnecting the atleast one organic layer from a corresponding layer extending toward thefirst area.
 13. The organic light-emitting display of claim 12, whereinthe at least one organic layer comprises a hole transport material, ahole injection material, an electron transport material, and/or anelectron injection material.
 14. The organic light-emitting display ofclaim 12, wherein the opposite electrode is disconnected by theunder-cut step.
 15. The organic light-emitting display of claim 12,wherein the opposite electrode layer comprises aluminum (Al), magnesium(Mg), silver (Ag), lithium (Li), calcium (Ca), or a compound thereof.16. The organic light-emitting display of claim 12, wherein thesubstrate has an opening in the first area.
 17. The organiclight-emitting display of claim 12, wherein the at least one insulatinglayer has an opening in the first area.
 18. The organic light-emittingdisplay of claim 12, wherein the at least one insulating layer comprisesan inorganic insulating layer and/or an organic insulating layer. 19.The organic light-emitting display of claim 12, further comprising aprotection layer that covers the plurality of pixels.
 20. The organiclight-emitting display of claim 19, wherein the protection layer coversa disconnected region of the at least one organic layer.
 21. The organiclight-emitting display of claim 20, wherein the protection layercomprises an inorganic protection layer and an organic protection layer.22. The organic light-emitting display of claim 12, wherein theunder-cut step is formed in a recess of the at least one insulatinglayer.
 23. The organic light-emitting display of claim 12, wherein theunder-cut step comprises a first sub-portion and a second sub-portionthat extends farther than the first sub-portion in a width direction.24. The organic light-emitting display of claim 23, wherein the firstsub-portion and the second sub-portion comprise different materials fromeach other.
 25. The organic light-emitting display of claim 23, whereina thickness of the first sub-portion is greater than a thickness of theat least one of the organic layer or the opposite electrode layer.